Non-volatile memory with a select gate regulator circuit
US10796741B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2019 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Oct 30, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/028
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A word line regulator provides a write word line voltage for an asserted word line and includes a write replica circuit, a reference current path, and a regulator circuit. The write replica circuit is a replica of a write path for writing from a low to high resistance value of a resistive memory element of a memory cell. The word line regulator regulates the word line voltage at a value during the write operation of a low to high resistance value such that a select transistor of the memory cell is used as a source follower to regulate a first node of a resistive element of the memory cell being written. The first node is at a higher write voltage than a second node of the resistive element during the write operation, and the first node is located in a write path between the select transistor and the second node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.