Eliminating yield impact of stochastics in lithography
US10796912B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2018 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | May 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31138
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatuses for performing cycles of aspect ratio dependent deposition and aspect ratio independent etching on lithographically patterned substrates are described herein. Methods are suitable for reducing variation of feature depths and/or aspect ratios between features formed and partially formed by lithography, some partially formed features being partially formed due to stochastic effects. Methods and apparatuses are suitable for processing a substrate having a photoresist after extreme ultraviolet lithography. Some methods involve cycles of deposition by plasma enhanced chemical vapor deposition and directional etching by atomic layer etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.