Richard Wise
35Patents
11h-index
50Co-inventors
78Inventor score
Filing activity: Feb 26, 1998 → Oct 5, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9824893B1 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 413 | Active |
| US10197908B2 | Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework | Physics | 21 | Active |
| US10546748B2 | Tin oxide films in semiconductor device manufacturing | Electricity | 19 | Active |
| US11031245B2 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 16 | Active |
| US10796912B2 | Eliminating yield impact of stochastics in lithography | Electricity | 15 | Active |
| US10269566B2 | Etching substrates using ale and selective deposition | Electricity | 14 | Active |
| US11183383B2 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 13 | Active |
| US11257674B2 | Eliminating yield impact of stochastics in lithography | Electricity | 12 | Active |
| US10534257B2 | Layout pattern proximity correction through edge placement error prediction | Electricity | 12 | Active |
| US11355353B2 | Tin oxide mandrels in patterning | Electricity | 12 | Active |
| US11322351B2 | Tin oxide films in semiconductor device manufacturing | Electricity | 11 | Active |
| US6093281A | Baffle plate design for decreasing conductance lost during precipitation of polymer precursors in plasma etching chambers | Electricity | 9 | Expired |
| US7030008B2 | Techniques for patterning features in semiconductor devices | Emerging Cross-Sectional Technologies | 9 | Expired |
| US9984858B2 | ALE smoothness: in and outside semiconductor industry | Electricity | 8 | Active |
| US10585347B2 | Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework | Physics | 8 | Active |
| US10685836B2 | Etching substrates using ALE and selective deposition | Electricity | 8 | Active |
| US11784047B2 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 7 | Active |
| US6686296B1 | Nitrogen-based highly polymerizing plasma process for etching of organic materials in semiconductor manufacturing | Electricity | 6 | Expired |
| US9922839B2 | Low roughness EUV lithography | Electricity | 5 | Active |
| US10304659B2 | Ale smoothness: in and outside semiconductor industry | Electricity | 4 | Active |
| US10438807B2 | Low roughness EUV lithography | Electricity | 3 | Active |
| US7545041B2 | Techniques for patterning features in semiconductor devices | Emerging Cross-Sectional Technologies | 3 | Active |
| US12051589B2 | Tin oxide thin film spacers in semiconductor device manufacturing | Electricity | 3 | Active |
| US11987876B2 | Chamfer-less via integration scheme | Electricity | 3 | Active |
| US12183604B2 | Integrated dry processes for patterning radiation photoresist patterning | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.