Electronic device including a high electron mobility transistor that includes a barrier layer having different portions
US10797168B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2019 |
| Grant date | Oct 6, 2020 |
| Priority date | — |
| Expiry date | Oct 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device can include a HEMT that includes a channel layer, a barrier layer, and a gate electrode. The barrier layer can be disposed between the channel layer and the gate electrode and include a first portion, a second portion, and a third portion. The second portion can be spaced apart from the channel layer by the first portion, and the second portion is spaced apart from the gate electrode by the third portion. The second portion of the barrier layer can be configured to trap more charge, more readily recombine electrons and holes, or both as compared to each of the first and third portions of the barrier layer. The HEMT can have a VTH of at least 2 V and a subthreshold slope of at most 50 mV/decade of IDS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.