Nucleation structure suitable for epitaxial growth of three-dimensional semiconductor elements
US10801129B2 · kind B2 · utility
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Key dates
| Filing date | Jun 26, 2017 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Jul 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nucleation structure for the epitaxial growth of three-dimensional semiconductor elements, including a substrate including a monocrystalline material forming a growth surface, a plurality of intermediate portions made of an intermediate crystalline material epitaxied from the growth surface and defining an upper intermediate surface, and a plurality of nucleation portions, made of a material including a transition metal forming a nucleation crystalline material, each epitaxied from the upper intermediate surface, and defining a nucleation surface suitable for the epitaxial growth of a three-dimensional semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.