Patent · US Active

Reticle and exposure method including projection of a reticle pattern into neighboring exposure fields

US10802404B2 · kind B2 · utility

0Cited by

6References

11Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joerg Ortner · Finkenstein, AT
Iris Moder · Villach, AT
Ingo Muri · Villach, AT

Key dates

Filing date	Mar 13, 2018
Grant date	Oct 13, 2020
Priority date	—
Expiry date	Nov 1, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/42
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An exposure method includes projecting a reticle pattern into a first exposure field of a photoresist layer, wherein the reticle pattern includes first and second line patterns on opposite edges of the reticle pattern and wherein at least the first line pattern includes an end section through which light flux decreases outwards. The reticle pattern is further projected into a second exposure field of the photoresist layer, wherein a first tapering projection zone of the end section of the first line pattern in the second exposure field overlaps a projection area of the second line pattern in the first exposure field.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.