Memory device with vertical string drivers

US10804280B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Khaled Hasnat · San Jose, US
• Prashant Majhi · San Jose, US
• Deepak Thimmegowda · Fremont, US

Key dates

• Filing date: Sep 5, 2018
• Grant date: Oct 13, 2020
• Expiry date: Oct 7, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6728

Abstract

Embodiments of the present disclosure are directed towards a memory device with vertical string drivers, in accordance with some embodiments. In one embodiment, the memory device includes a plurality of wordlines formed in a stack of multiple tiers. The device further includes a semiconductor layer disposed on top of the plurality of wordlines. The device further includes a plurality of string drivers disposed in the semiconductor layer substantially perpendicular to the tier stack of the plurality of wordlines. The semiconductor layer provides respective gate connections for the plurality of string drivers. In some embodiments, the semiconductor layer may be fabricated of polysilicon. Other embodiments may be described and/or claimed.