Semiconductor device and method of manufacturing the same
US10804290B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2019 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Mar 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
According to one embodiment, the stacked body includes a first stacked portion including a plurality of electrode layers, a second stacked portion including a plurality of electrode layers, and being disposed separately from the first stacked portion in the first direction, and a connection portion including a high dielectric layer provided between the first stacked portion and the second stacked portion and having a dielectric constant higher than a dielectric constant of the insulator. The column-shaped portion includes a first portion provided in the first stacked portion and extending in the first direction of the stacked body, a second portion provided in the second stacked portion and extending in the first direction, and an intermediate portion provided in the connection portion and connected the first portion to the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.