Patent · US Active

Radio frequency resistor element

US10804354B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans Taddiken · Munich, DE
Martin Bartels · Dresden, DE
Andrea Cattaneo · Taufkirchen, DE
Henning Feick · Dresden, DE
Christian Kuehn · Munich, DE
Anton Steltenpohl · Munich, DE

Key dates

Filing date	Mar 23, 2018
Grant date	Oct 13, 2020
Priority date	—
Expiry date	Jul 19, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/1421
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A radio frequency resistor element comprises a resistive polysilicon trace, an isolation component and a semiconductor substrate. The resistive polysilicon trace is located above the isolation component. The isolation component is laterally at least partially surrounded by a modified semiconductor region located above the semiconductor substrate and having a higher charge carrier recombination rate than the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.