Magnetoresistive element and magnetic memory
US10804457B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2016 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Aug 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive element includes a reference layer having a fixed magnetization direction and including a ferromagnetic material containing Fe or Co, a recording layer having a variable magnetization direction and including a ferromagnetic material, and one non-magnetic layer that is formed between the reference layer and the recording layer and that contains oxygen. One of the reference layer and the recording layer contains Fe. The three layers are arranged so that a magnetization direction of the one of the reference layer and the recording layer becomes perpendicular to a layer surface by an interfacial perpendicular magnetic anisotropy at an interface between the one of the reference layer and the recording layer and the one non-magnetic layer resulting from the one of the reference layer and the recording layer having a predetermined thickness. The one of the reference layer and the recording layer has a bcc structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.