Segmented stress decoupling via frontside trenching

US10807862B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Florian BRANDL · Maxhütte-Haidhof, DE
• Robert Gruenberger · Nandlstadt, DE
• Wolfram Langheinrich · Dresden, DE

Key dates

• Filing date: Apr 3, 2019
• Grant date: Oct 20, 2020
• Expiry date: Apr 3, 2039

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2203/0714
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, wherein the stress-sensitive sensor is sensitive to mechanical stress; a first pair of adjacent stress-decoupling trenches arranged laterally from a first lateral side of the stress-sensitive sensor, where each stress-decoupling trench of the first pair of adjacent stress-decoupling trenches extends partially from the first surface into the substrate towards the second surface although not completely to the second surface; and a first spring structure formed between the first pair of adjacent stress-decoupling trenches such that the first spring structure is arranged laterally from the stress-sensitive sensor and is configured to absorb external stress from an environment.