Patent · US Active

Three-dimensional memory device with static random-access memory

US10811071B1 · kind B1 · utility

11Cited by

6References

20Claims

0Family size

Assignee

YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

Yue Li · 红钢城街道, CN
Chun Yuan Hou · 红钢城街道, CN

Key dates

Filing date	Jun 27, 2019
Grant date	Oct 20, 2020
Priority date	—
Expiry date	Jun 27, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/27
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments of three-dimensional (3D) memory devices with a 3D memory device includes a first semiconductor structure having a peripheral circuit, an array of SRAM cells, and a first bonding layer having a plurality of first bonding contacts. The 3D memory device also includes a second semiconductor structure having an array of 3D NAND memory strings and a second bonding layer including a plurality of second bonding contacts and a bonding interface between the first bonding layer and the second bonding layer, wherein the first bonding contacts are in contact with the second bonding contacts at the bonding interface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.