Substrate support with dual embedded electrodes
US10811296B2 · kind B2 · utility
38Cited by
28References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 20, 2017 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Feb 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68742
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage to a substrate, and methods of biasing the substrate using the pulsed DC voltage, during plasma assisted or plasma enhanced semiconductor manufacturing processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.