Philip Allan Kraus
110Patents
13h-index
172Co-inventors
89Inventor score
Filing activity: Jun 12, 2002 → Jul 9, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10373804B2 | System for tunable workpiece biasing in a plasma reactor | Electricity | 74 | Active |
| US10510575B2 | Substrate support with multiple embedded electrodes | Electricity | 50 | Active |
| US6831021B2 | Plasma method and apparatus for processing a substrate | Electricity | 42 | Expired |
| US10312048B2 | Creating ion energy distribution functions (IEDF) | Electricity | 39 | Active |
| US10904996B2 | Substrate support with electrically floating power supply | Electricity | 38 | Active |
| US10811296B2 | Substrate support with dual embedded electrodes | Electricity | 38 | Active |
| US10714372B2 | System for coupling a voltage to portions of a substrate | Electricity | 36 | Active |
| US10763150B2 | System for coupling a voltage to spatially segmented portions of the wafer with variable voltage | Electricity | 36 | Active |
| US7179754B2 | Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy | Electricity | 33 | Expired |
| US10685807B2 | Creating ion energy distribution functions (IEDF) | Electricity | 32 | Active |
| US10923320B2 | System for tunable workpiece biasing in a plasma reactor | Electricity | 30 | Active |
| US6660659B1 | Plasma method and apparatus for processing a substrate | Electricity | 29 | Expired |
| US8323754B2 | Stabilization of high-k dielectric materials | Electricity | 19 | Active |
| US7514373B2 | Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy | Electricity | 12 | Active |
| US7902018B2 | Fluorine plasma treatment of high-k gate stack for defect passivation | Electricity | 8 | Active |
| US8143147B1 | Methods and systems for forming thin films | Emerging Cross-Sectional Technologies | 8 | Active |
| US7727828B2 | Method for fabricating a gate dielectric of a field effect transistor | Electricity | 7 | Active |
| US11049694B2 | Modular microwave source with embedded ground surface | Electricity | 6 | Active |
| US9975758B2 | Wafer processing equipment having exposable sensing layers | Performing Operations; Transporting | 6 | Active |
| US7888217B2 | Method for fabricating a gate dielectric of a field effect transistor | Emerging Cross-Sectional Technologies | 5 | Active |
| US9725302B1 | Wafer processing equipment having exposable sensing layers | Performing Operations; Transporting | 5 | Active |
| US10607817B2 | Thermal repeatability and in-situ showerhead temperature monitoring | Electricity | 4 | Active |
| US7964418B2 | Real time process monitoring and control for semiconductor junctions | Emerging Cross-Sectional Technologies | 4 | Active |
| US10879042B2 | Symmetric plasma source to generate pie shaped treatment | Electricity | 3 | Active |
| US8110828B2 | Real time process monitoring and control for semiconductor junctions | Emerging Cross-Sectional Technologies | 3 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.