Methods of fabricating conductive traces and resulting structures
US10811313B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 29, 2019 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Apr 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming conductive traces comprises forming a seed material over a surface of a substrate, forming a patterned mask material over the seed material to define trenches leaving portions of the seed material within the trenches exposed, and depositing a conductive material over the exposed seed material in the trenches to form conductive traces. At least a portion of the patterned mask material is removed, a barrier formed over side surfaces and upper surfaces of the conductive traces, and exposed portions of the seed material are removed. Conductive traces and structures incorporating conductive traces are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.