Method of manufacturing semiconductor device
US10811382B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2019 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | May 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1434
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method of manufacturing a semiconductor device. The method includes steps of providing a first wafer including a first substrate and a plurality of first conductors over the first substrate; forming a first interconnect structure penetrating through the first substrate and contacting one of the first conductors; forming a bonding dielectric on the first substrate and the first interconnect structure; bonding a second wafer on the first wafer, wherein the second wafer includes a second substrate, a second ILD layer on a second front surface of the second substrate, and a plurality of second conductors in the second ILD layer, wherein the second ILD layer is in contact with the bonding dielectric; forming a second interconnect structure penetrating through the second substrate and into the second ILD layer and contacting the second conductor and the first interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.