Trench gate trench field plate vertical mosfet
US10811530B2 · kind B2 · utility
0Cited by
7References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 30, 2017 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Jun 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a vertical drain extended MOS transistor may be formed by forming deep trench structures to define vertical drift regions of the transistor, so that each vertical drift region is bounded on at least two opposite sides by the deep trench structures. The deep trench structures are spaced so as to form RESURF regions for the drift region. Trench gates are formed in trenches in the substrate over the vertical drift regions. The body regions are located in the substrate over the vertical drift regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.