Deposition device and deposition method
US10815567B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2015 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Mar 2, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4554
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film deposition device includes a reaction gas supply part which is in communication with a process space defined between a placement part and a ceiling part. An annular gap in a plan view exists between an outer peripheral portion of the placement part and an outer peripheral portion of the ceiling part in circumferential directions of the placement part and the ceiling part. A reaction gas supplied from the reaction gas supply part into the process space via the ceiling part flows outside of the process space via the annular gap. A plurality of gas flow channels, which is used for forming gas-flow walls, is formed in the outer peripheral portion of the ceiling part which provides the annular gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.