Magnetic tunnel junction with perpendicular shape anisotropy and minimised variation of temperature memory point and logic element including the magnetic tunnel junction, method of manufacturing the magnetic tunnel junction
US10818329B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 22, 2019 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Feb 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction with out-of-plane magnetisation includes a storage layer; a reference layer; and a tunnel barrier layer. The two magnetisation states of the storage layer are separated by an energy barrier including a contribution due to the shape anisotropy of the storage layer and a contribution of interfacial origin for each interface of the storage layer. The storage layer has a thickness comprised between 0.8 and 8 times a characteristic dimension of a planar section of the tunnel junction. The contribution to the energy barrier due to the shape anisotropy of the storage layer is at least two times greater and preferably at least 4 times greater than the contributions to the energy barrier of interfacial origin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.