Self-assembled monolayer blocking with intermittent air-water exposure
US10818510B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Jan 28, 2019 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Jan 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76849
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.