Patent · US Active

Termination structures in stacked memory arrays

US10818681B2 · kind B2 · utility

2Cited by

1References

24Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Yi Hu · Boise, US
Jian Li · Boise, US
Lifang Xu · Boise, US
Xiaosong Zhang · Boise, US

Key dates

Filing date	Oct 15, 2018
Grant date	Oct 27, 2020
Priority date	—
Expiry date	Feb 7, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10B43/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an example, a method of forming a stacked memory array includes, forming a termination structure passing through a stack of alternating first and second dielectrics in a first region of the stack; forming first and second sets of contacts through the stack of alternating first and second dielectrics in a second region of the stack concurrently with forming the termination structure; forming an opening through the stack of alternating first and second dielectrics between the first and second sets of contacts so that the opening terminates at the termination structure; and removing the first dielectrics from the second region by accessing the first dielectrics through the opening so that the first and second sets of contacts pass through the second dielectrics alternating with spaces corresponding to the removed first dielectrics.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.