Electronic device including a high electron mobility transistor including a gate electrode and a dielectric film

US10818787B1 · kind B1 · utility

Assignee

• SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC · US

Inventors

• Abhishek Banerjee · Houston, US
• Peter Moens · Zottegem, BE

Key dates

• Filing date: Jul 18, 2019
• Grant date: Oct 27, 2020
• Expiry date: Jul 18, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

An electronic device can include a HEMT. In an embodiment, a gate electrode, a drain electrode, and an access region including a first portion closer to the gate electrode and a second portion closer to the drain electrode. A lower dielectric film can overlie a portion of the access region, and an upper dielectric region can overlie another portion of the access region. In another embodiment, a dielectric film can have a relatively positive or negative charge and a varying thickness. In a further embodiment, the HEMT can include a gate electrode; a dielectric film overlying the gate electrode and defining openings to the gate electrode, wherein a portion of the dielectric film is disposed between the openings; and a gate interconnect extending into the openings of the dielectric film and contacting the gate electrode and the portion of the dielectric film.