Semiconductor detectors integrated with Bragg reflectors
US10818807B2 · kind B2 · utility
3Cited by
14References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2019 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Jan 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present disclosure generally relates to semiconductor detectors for use in optoelectronic devices and integrated circuit (IC) chips, and methods for forming same. More particularly, the present disclosure relates to integration of semiconductor detectors with Bragg reflectors. The photodetector of the present disclosure includes a substrate, a Bragg reflector disposed on the substrate, and a semiconductor detector disposed on the Bragg reflector. The Bragg reflector includes alternating layers of a semiconductor material and a dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.