Substrate drying apparatus, facility of manufacturing semiconductor device, and method of drying substrate
US10825698B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2017 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | Jul 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.