Patent · US Active

Polarization gate stack SRAM

US10832761B2 · kind B2 · utility

2Cited by

0References

20Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Daniel H. Morris · Hillsboro, US
Uygar E. Avci · Portland, US
Ian A. Young · Portland, US

Key dates

Filing date	Jan 2, 2020
Grant date	Nov 10, 2020
Priority date	—
Expiry date	Jan 2, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/223
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

One embodiment provides an apparatus. The apparatus includes a first inverter comprising a first pull up transistor and a first pull down transistor; a second inverter cross coupled to the first inverter, the second inverter comprising a second pull up transistor and a second pull down transistor; a first access transistor coupled to the first inverter; and a second access transistor coupled to the second inverter. A gate electrode of one transistor of each inverter comprises a polarization layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.