Contact for semiconductor device
US10833017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2016 |
| Grant date | Nov 10, 2020 |
| Priority date | — |
| Expiry date | Oct 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76805
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a source/drain contact trench adjacent to a gate. The source/drain contact trench may include a first portion and a second portion on the first portion. The semiconductor device also may include an insulating contact spacer liner within the source/drain contact trench. The insulating contact spacer liner contacts the first portion but not the second portion of the source/drain contact trench. The semiconductor device may further include a conductive material within the insulating contact spacer liner and the second portion of the source/drain contact trench. The conductive material may land in a source/drain region of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.