Semiconductor device with transistor local interconnects

US10833018B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Mahbub Rashed · Cupertino, US
• Irene Y. Lin · Los Altos Hills, US
• Steven R. Soss · Patterson, US
• Jeff Kim · San Jose, US
• Chinh Nguyen · San Jose, US
• Marc Tarabbia · Austin, US
• Scott Johnson · Wappingers Falls, US
• Subramani Kengeri · Norwood, US
• Suresh Venkatesan · Los Gatos, US

Key dates

• Filing date: Jul 3, 2019
• Grant date: Nov 10, 2020
• Expiry date: Jul 3, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/907
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a substrate with first and second transistors disposed thereon and including sources, drains, and gates, wherein the first and second gates extend longitudinally as part of linear strips that are parallel to and spaced apart. The device further includes a first CB layer forming a local interconnect electrically connected to the first gate, a second CB layer forming a local interconnect electrically connected to the second gate, and a CA layer forming a local interconnect extending longitudinally between first and second ends of the CA layer. The first and second CB layers and the CA layer are disposed between a first metal layer and the substrate. The first metal layer is disposed above each source, drain, and gate of the transistors, The CA layer extends parallel to the first and second linear strips and is substantially perpendicular to the first and second CB layers.