3D phase change memory

US10833269B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Wei Wang · Zhubei City, TW
• Balasubramanian Pranatharthiharan · Watervliet, US
• Injo Ok · Lockport, US
• Kevin W. Brew · Albany, US

Key dates

• Filing date: May 7, 2019
• Grant date: Nov 10, 2020
• Expiry date: May 7, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A method is presented for constructing a three-dimensional (3D) stack phase change memory (PCM) device. The method includes forming a plurality of stack layers over a plurality of conductive lines, the plurality of conductive lines formed within trenches of an inter-layer dielectric (ILD), forming isolation trenches extending through the plurality of stack layers, etching the plurality of stack layers to define an opening, filling the opening with at least a phase change material, and constructing vias to the plurality of conductive lines.