Etchant composition, method of etching insulating film, method of manufacturing semiconductor device, and silane compound
US10836962B2 · kind B2 · utility
1Cited by
1References
18Claims
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Key dates
| Filing date | May 24, 2019 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | May 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
An etchant composition includes a silane compound represented by the following Chemical Formula 1:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.