Patent · US Active

Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device

US10837120B2 · kind B2 · utility

0Cited by

11References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Johannes Freund · Dietenhofen, DE
Thomas Wuebben · Salzburg, AT
Helmut Oefner · Zorneding, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Mar 26, 2020
Grant date	Nov 17, 2020
Priority date	—
Expiry date	Mar 26, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/20
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

One example describes a method of manufacturing Czochralski (CZ) silicon wafers. The method includes slicing an n-type CZ silicon ingot to form a plurality of CZ silicon wafers, determining a boron concentration of each CZ silicon wafer, dividing the CZ silicon wafers into sub-groups based on the boron concentration, wherein an average value of the boron concentration differs among the sub-groups, and labeling each sub-group of CZ silicon wafers with a different label which is indicative of the boron concentration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.