Set/reset methods for crystallization improvement in phase change memories
US10839897B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 14, 2019 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | May 14, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods for improving the crystallization of a phase change material of a phase change memory cell are described. A two-step SET pulse may be applied to the phase change material in which a first lower SET pulse is applied to make the phase change material dwell at 600K to incubate nuclei near the maximum nucleation rate and then a second higher SET pulse is immediately applied to make the phase change material dwell at 720K to maximize crystal growth. Moreover, the slope of the falling edge of a RESET pulse applied prior to the two-step SET pulse may be adjusted to increase the number of nuclei (e.g., formed with a steeper falling edge) to increase SET efficiency at the expense of a more stable amorphous phase (e.g., formed with a less steep falling edge) that improves data retention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.