Patent · US Active

Semiconductor memory

US10839913B2 · kind B2 · utility

3Cited by
1References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 11, 2019
Grant dateNov 17, 2020
Priority date
Expiry dateSep 11, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B43/27
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, a semiconductor memory includes: a first bit line; a first select transistor having a first terminal connected to the first bit line; a first memory cell connected to a second terminal of the first select transistor; a circuit connected to the first bit line and applying an erase voltage to be applied to the first memory cell to the bit line via the first terminal and the second terminal; and a diode connected to the first bit line and the first circuit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.