Patent · US Active

Memory disturb detection

US10839922B2 · kind B2 · utility

4Cited by

11References

24Claims

0Family size

Assignee

Sandisk Technologies, Inc. · US

Inventors

Xiang Yang · Santa Clara, US
Huai-Yuan Tseng · San Ramon, US
Deepanshu Dutta · Fremont, US

Key dates

Filing date	May 26, 2018
Grant date	Nov 17, 2020
Priority date	—
Expiry date	Aug 9, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG11C2029/0411
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An apparatus includes an array of memory cells comprising a first sub-block and a second sub-block electrically coupled by a channel. The apparatus also includes a measurement circuit configured to take a first measurement of a first sub-block of memory cells at a first offset threshold and a second measurement of the first sub-block of memory cells at a second offset threshold. The apparatus further includes a detection circuit configured to detect a disturb condition of the first sub-block based on at least one of the first measurement and the second measurement, and to initiate data maintenance in response to the disturb condition of the first sub-block.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.