Inventor · Santa Clara, CA, US

Xiang Yang

210Patents
9h-index
145Co-inventors
79Inventor score

Filing activity: Jun 23, 2011 → Apr 26, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US11640388B2 Cognitive data outlier pre-check based on data lineage Physics 46 Active
USD872394S1 Handheld vacuum cleaner General 34 Active
US8872430B2 LED drive circuit Emerging Cross-Sectional Technologies 17 Active
US10157680B2 Sub-block mode for non-volatile memory Physics 15 Active
US11455322B2 Classification of time series data Physics 14 Active
US10559368B1 Non-volatile memory with countermeasures for select gate disturb during program pre-charge Electricity 13 Active
US10636498B1 Managing bit-line settling time in non-volatile memory Electricity 13 Active
US10832778B1 Negative voltage wordline methods and systems Physics 13 Active
US10910060B1 Select line voltage waveform real-time monitor for non-volatile memory Physics 9 Active
US10726920B2 Pre-charge voltage for inhibiting unselected NAND memory cell programming Physics 9 Active
US10559365B2 Peak current suppression Electricity 7 Active
US10468111B1 Asymmetric voltage ramp rate control Physics 7 Active
US10930355B2 Row dependent sensing in nonvolatile memory Physics 7 Active
US11676351B1 Automated refinement of augmented reality virtual object annotations Physics 6 Active
US10839915B1 Bitline boost for nonvolatile memory Physics 6 Active
US10910075B2 Programming process combining adaptive verify with normal and slow programming speeds in a memory device Physics 6 Active
US10643721B2 Interleaved program and verify in non-volatile memory Electricity 5 Active
US10381083B1 Bit line control that reduces select gate transistor disturb in erase operations Electricity 5 Active
US8704463B2 Temperature control method and apparatus for light emitting diode and liquid crystal display Electricity 5 Active
US10559370B2 System and method for in-situ programming and read operation adjustments in a non-volatile memory Physics 4 Active
US10707226B1 Source side program, method, and apparatus for 3D NAND Electricity 4 Active
US10714198B1 Dynamic 1-tier scan for high performance 3D NAND Physics 4 Active
US10614898B1 Adaptive control of memory cell programming voltage Physics 4 Active
US9401600B2 Overvoltage protection circuit, overvoltage protection method and panel driving circuit Emerging Cross-Sectional Technologies 4 Active
US10839922B2 Memory disturb detection Physics 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.