Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture
US10840436B2 · kind B2 · utility
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200References
19Claims
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Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Nov 17, 2020 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A Magnetic Tunnel Junction (MTJ) device can include a free magnetic layer having a predetermined smoothness. An etching process for smoothing the free magnetic layer can be performed in-situ with various deposition processes after a high temperature annealing of the MTJ formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.