Mechanical stress decoupling for microelectromechanical systems (MEMS) elements with gel-filling

US10843916B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Dirk Meinhold · Dresden, DE
• Florian BRANDL · Maxhütte-Haidhof, DE
• Robert Gruenberger · Nandlstadt, DE
• Wolfram Langheinrich · Dresden, DE
• Sebastian Luber · Garching bei München, DE
• Roland Meier · Holzwickede, DE
• Bernhard Winkler · Birkenfeld, DE

Key dates

• Filing date: Mar 4, 2019
• Grant date: Nov 24, 2020
• Expiry date: Mar 4, 2039

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81B2207/012
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor chip including a substrate having a first surface and a second surface arranged opposite to the first surface; at least one stress-decoupling trench that extends from the first surface into the substrate, where the at least one stress-decoupling trench extends partially into the substrate towards the second surface although not completely to the second surface; a microelectromechanical systems (MEMS) element, including a sensitive area, disposed at the first surface of the substrate and laterally spaced from the at least one stress-decoupling trench; and a stress-decoupling material that fills the at least one stress-decoupling trench and covers the sensitive area of the MEMS element.