Composition for forming resist underlayer film and method for forming resist pattern using same
US10844167B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2017 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Jun 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A composition for forming a resist underlayer film that has a high dry etching rate, functions as an anti-reflective coating during exposure, and fills a recess having a narrow space and a high aspect ratio. A composition for forming a resist underlayer film has a copolymer having a structural unit of following formula (1), a cross-linkable compound, a cross-linking catalyst, and a solvent: wherein R1 and R2 are each independently a C1-3 alkylene group or a single bond, Z is an —O— group, a —S— group, or a —S—S— group, and Ar is an arylene group. The copolymer is synthesized by a reaction of a carboxyl group of a dicarboxylic acid compound having an —O— group, a —S— group, or a —S—S— group with an epoxy group of a diglycidyl ether compound having an arylene group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.