Method for forming a chemical guiding structure on a substrate and chemoepitaxy method
US10845705B2 · kind B2 · utility
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Key dates
| Filing date | Dec 20, 2018 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Dec 20, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a chemical guiding structure intended for self-assembly of a block copolymer by chemoepitaxy, where the method includes forming on a substrate a functionalisation layer made of a first polymer material having a first chemical affinity with respect to the block copolymer; forming on the substrate guiding patterns made of a second polymer material having a second chemical affinity with respect to the block copolymer, different from the first chemical affinity, and wherein the guiding to patterns have a critical dimension of less than 12.5 nm and are formed by means of a mask comprising spacers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.