Patent · US Active

Method of selective deposition for forming fully self-aligned vias

US10847363B2 · kind B2 · utility

34Cited by
3References
20Claims
0Family size

Assignee

Inventor

Key dates

Filing dateNov 16, 2018
Grant dateNov 24, 2020
Priority date—
Expiry dateNov 16, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/68771
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods are provided for selective film deposition. One method includes providing a substrate containing a dielectric material and a metal layer, the metal layer having an oxidized metal layer thereon, coating the substrate with a metal-containing catalyst layer, treating the substrate with an alcohol solution that removes the oxidized metal layer from the metal layer along with the metal-containing catalyst layer on the oxidized metal layer, and exposing the substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO2 film on the metal-containing catalyst layer on the dielectric material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.