Non-symmetric body contacts for field-effect transistors
US10847445B2 · kind B2 · utility
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Key dates
| Filing date | Mar 31, 2017 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Apr 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Field-effect transistor (FET) devices are described herein that include one or more body contacts implemented near source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. For example, body contacts can be implemented between S/G/D assemblies rather than on the ends of such assemblies. This can advantageously improve body contact influence on the S/G/D assemblies while maintaining a targeted size for the FET device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.