Semiconductor device and method to fabricate the semiconductor device
US10847465B2 · kind B2 · utility
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4References
10Claims
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Key dates
| Filing date | Mar 30, 2020 |
| Grant date | Nov 24, 2020 |
| Priority date | — |
| Expiry date | Mar 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure of semiconductor device includes a substrate, having a dielectric layer on top. At least two metal elements are formed in the dielectric layer, wherein an air gap is between adjacent two of the metal elements. A cap layer is disposed over the substrate, wherein a portion of the cap layer above the adjacent two of the metal elements has a hydrophilic surface. An inter-layer dielectric layer is disposed on the cap layer. The inter-layer dielectric layer seals the air gap between the two metal elements. The air gap remains and extends higher than a top surface of the metal elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.