PECVD deposition system for deposition on selective side of the substrate
US10851457B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2017 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | May 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67161
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma processing system is provided. The system includes a chamber, a controller and a showerhead disposed in the chamber. A first gas manifold is connected to the showerhead for providing a first gas from a first gas source responsive to control from the controller. A shower-pedestal is disposed in the chamber and oriented opposite the showerhead. A second gas manifold is connected to the shower-pedestal for providing a second gas from a second gas source responsive to control from the controller. A substrate support for holding a substrate at a spaced apart relationship from the shower-pedestal is provided. A radio frequency (RF) power supply for providing power to the showerhead to generate a plasma is provided. The plasma is used for depositing a film on a back-side of the substrate, when present in the chamber. The substrate is held by the substrate support in the spaced apart relationship from the shower-pedestal, during backside deposition. The showerhead provides a purge gas during the backside deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.