Patent · US Active

Stray field robust xMR sensor using perpendicular anisotropy

US10852369B2 · kind B2 · utility

1Cited by

3References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Wolfgang Raberg · Sauerlach, DE
Clemens Muehlenhoff · Munich, DE
Juergen Zimmer · Neubiberg, DE

Key dates

Filing date	Jan 9, 2019
Grant date	Dec 1, 2020
Priority date	—
Expiry date	Jun 9, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10N50/85
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A magnetoresistive sensor has a sensor plane in which the magnetoresistive sensor is sensitive to a magnetic field. The magnetoresistive sensor includes a reference layer having a reference magnetization that is fixed and that is aligned with an in-plane axis of the sensor plane; and a magnetic free layer disposed proximate to the reference layer, the magnetic free layer having a free layer magnetization aligned along an out-of-plane axis that is out-of-plane to the sensor plane. The free layer magnetization is configured to tilt away from the out-of-plane axis and towards the sensor plane in a presence of an external in-plane magnetic field.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.