Patent · US Active

Backup and/or restore of a memory circuit

US10854291B2 · kind B2 · utility

8Cited by

1References

6Claims

0Family size

Assignee

Arm Limited · GB

Inventors

Akhilesh Jaiswal · West Lafayette, US
Mudit Bhargava · Austin, US
George McNeil Lattimore · Austin, US

Key dates

Filing date	Oct 23, 2018
Grant date	Dec 1, 2020
Priority date	—
Expiry date	Oct 23, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/419
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Briefly, embodiments of claimed subject matter relate to backup of parameters, such as binary logic values, stored in nonvolatile memory, such as one or more SRAM cells. Binary logic values from a SRAM cell, for example, may be stored utilizing resistance states of a magnetic random-access memory (MRAM) element. Parameters stored in one or more MRAM elements may be restored to SRAM memory cells following a backup.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.