Microelectronic devices including two contacts
US10854514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2019 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Apr 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/679
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A memory device with a dielectric layer or an air gap between contacts and a method of making the same are disclosed. The method comprises a series of steps including forming a plurality of conductive lines having trenches therebetween; forming a contact layer in the trench; and forming a dielectric layer interposed in the contact layer and configured to divide the contact layer into two contacts. The method also comprises removing the dielectric layer to form a space and forming a cap layer over the two contacts to form an air gap therein. The method further comprises forming a second air gap between the conductive line and the two contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.