Buried word line of a dynamic random access memory and method for fabricating the same
US10854613B2 · kind B2 · utility
1Cited by
6References
5Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 8, 2019 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | May 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a buried word line (BWL) of a dynamic random access memory (DRAM) includes the steps of: forming a first doped region in a substrate; removing part of the first doped region to form a trench in the substrate; forming a gate structure in the trench; and forming a barrier structure between the gate structure and the first doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.