Method of forming a semiconductor device
US10854718B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
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Inventor
Key dates
| Filing date | Feb 21, 2017 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Jun 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
In one embodiment, a method of forming a HEM diode may comprise forming the HEM diode with high forward voltage that is greater than one of a gate-to-source threshold voltage of a HEMT or a forward voltage of a P-N diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.