Access schemes for section-based data protection in a memory device
US10855295B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2020 |
| Grant date | Dec 1, 2020 |
| Priority date | — |
| Expiry date | Apr 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03L7/193
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods, systems, and devices for section-based data protection in a memory device are described. In one example, a memory device may include a set memory sections each having memory cells configured to be selectively coupled with access lines of the respective memory section. A method of operating the memory device may include selecting at least one of the sections for a voltage adjustment operation based on a determined value of a timer, and performing the voltage adjustment operation on the selected section by activating each of a plurality of word lines of the selected section. The voltage adjustment operation may include applying an equal voltage to opposite terminals of the memory cells, which may allow built-up charge, such as leakage charge accumulating from access operations of the selected memory section, to dissipate from the memory cells of the selected section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.