Method and apparatus for manufacturing silicon single crystal
US10858753B2 · kind B2 · utility
1Cited by
2References
11Claims
0Family size
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Key dates
| Filing date | May 9, 2017 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Aug 28, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B30/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon single crystal manufacturing method by a Czochralski method pulls up a silicon single crystal from a silicon melt in a quartz crucible while applying a magnetic field to the silicon melt. During a pull-up process of the silicon single crystal, the surface temperature of the silicon melt is continuously measured, and crystal growth conditions are changed based on a result of frequency analysis of the surface temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.