Wataru Sugimura
23Patents
4h-index
16Co-inventors
56Inventor score
Filing activity: Feb 25, 2004 → Feb 27, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7700394B2 | Method for manufacturing silicon wafer method | Electricity | 12 | Expired |
| US7320731B2 | Process for growing silicon single crystal and process for producing silicon wafer | Chemistry; Metallurgy | 11 | Active |
| US7364618B2 | Silicon wafer, method for manufacturing the same and method for growing silicon single crystals | Chemistry; Metallurgy | 5 | Expired |
| US7435294B2 | Method for manufacturing silicon single crystal, and silicon wafer | Chemistry; Metallurgy | 4 | Expired |
| US7637997B2 | Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal | Chemistry; Metallurgy | 4 | Expired |
| US7384480B2 | Apparatus for manufacturing semiconductor single crystal | Emerging Cross-Sectional Technologies | 3 | Active |
| US7306676B2 | Apparatus for manufacturing semiconductor single crystal | Emerging Cross-Sectional Technologies | 2 | Expired |
| US8617311B2 | Silicon single crystal wafer for IGBT and method for manufacturing silicon single crystal wafer for IGBT | Electricity | 2 | Active |
| US7628854B2 | Process for producing silicon single crystal | Chemistry; Metallurgy | 2 | Active |
| US7300517B2 | Manufacturing method of hydrogen-doped silicon single crystal | Chemistry; Metallurgy | 2 | Expired |
| US7374741B2 | Method for growing silicon single crystal and silicon wafer | Chemistry; Metallurgy | 2 | Active |
| US7790573B2 | Process for producing SOI substrate and process for regeneration of layer transferred wafer in the production | Electricity | 1 | Active |
| US11781242B2 | Method for controlling convection pattern of silicon melt, method for producing silicon single crystals, and device for pulling silicon single crystals | Chemistry; Metallurgy | 1 | Active |
| US11261540B2 | Method of controlling convection patterns of silicon melt and method of manufacturing silicon single crystal | Chemistry; Metallurgy | 1 | Active |
| US11186921B2 | Method for controlling convection pattern of silicon melt and method for producing monocrystalline silicon | Chemistry; Metallurgy | 1 | Active |
| US10858753B2 | Method and apparatus for manufacturing silicon single crystal | Chemistry; Metallurgy | 1 | Active |
| US11441238B2 | Silicon monocrystal manufacturing method and silicon monocrystal pulling device | Chemistry; Metallurgy | 1 | Active |
| US7704318B2 | Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate | Chemistry; Metallurgy | 0 | Expired |
| US11078595B2 | Method of producing silicon single crystal ingot and silicon single crystal ingot | Chemistry; Metallurgy | 0 | Active |
| US10415150B2 | Apparatus for manufacturing silicon single crystal and melt inlet pipe of the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US11885038B2 | Method of estimating convection pattern of silicon melt, method of estimating oxygen concentration of silicon single crystal, method of manufacturing silicon single crystal, and raising device of silicon single crystal | Chemistry; Metallurgy | 0 | Active |
| US7824493B2 | Silicon wafer and method for manufacturing the same | Electricity | 0 | Expired |
| US8758505B2 | Silicon wafer and method for manufacturing the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.